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| 2N5067 Datasheet, PDF (2/2 Pages) Savantic, Inc. – Silicon NPN Power Transistors | |||
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2N5067
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
Collector - Emitter Breakdown
VCEO(BR)* Voltage
IC = 200mA
40
ICEO
Collector Cut-off Current
VCE = 40V
IB = 0
ICEX
Collector Cut-off Current
VCE = 40V
VBE = 1.5V
TCASE =150°C
ICBO
Collector Cut-off Current
VCB = 40V
IE = 0
IEBO
Emitter Cut-off Current
VBE = 5V
IC = 0
hFE*
DC Current Gain
IC = 1.0A
IC = 5A
VCE = 2V
20
VCE = 2V
7
VCE(sat)*
Collector â Emitter Saturation
Voltage
IC = 1.0A
IC = 5A
IB = 0.1A
IB = 1.0A
VBE(on)* Emitter Base on Voltage
IC = 1.0A
VCE = 2V
hfe
Small Signal Current Gain
IC = 0.5A VCE = 10V f = 1.0 kHz
20
Current Gain Bandwidth
fT
product
IC =1.0A VCE = 10V f = 1.0 MHz
4.0
THERMAL CHARACTERISTICS
RθJC
Thermal Resistance Junction to Case
Max
Typ.
2.0
* Pulse test tp = 300μs , δ = 2 %
Max. Unit
V
1.0 mA
0.1
mA
2
0.1 mA
1.0 mA
80
â
0.4
V
1.5
1.2
V
â
MHz
°C/W
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 6605
Issue 1
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