2N5067 Datasheet, PDF (1/2 Pages) Savantic, Inc. – Silicon NPN Power Transistors

2N5067
MECHANICAL DATA
Dimensions in mm(inches)
25.15 (0.99)
26.67 (1.05)
10.67 (0.42)
11.18 (0.44)
6.35 (0.25)
9.15 (0.36)
1.52 (0.06)
3.43 (0.135)
1
2
3
(case)
3.84 (0.151)
4.09 (0.161)
7.92 (0.312)
12.70 (0.50)
TO–3(TO204AA)
PIN 1 — Base PIN 2 — Emitter
.
Case is Collector
NPN SILICON POWER
TRANSISTOR
FEATURES
• LOW SATURATION VOLTAGES
• HIGH RELIABILITY
• HERMETIC PACKAGE
APPLICATIONS
• POWER SWITCHING CIRCUITS
• POWER AMPLIFIER APPLICATIONS
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
V_CBO
Collector – Base Voltage (I_E = 0)
V_CEO
Collector – Emitter Voltage (I_B = 0)
V_EBO
Emitter – Base Voltage (I_C = 0)
I_C
Collector Current Continuous
I_CM
Collector Current Peak
I_B
Base Current
P_tot
Total Power Dissipation at T_case ≤ 25°C
Derate above 25°C
T_stg,
Storage Temperature
T_j
Junction Temperature
40V
40V
5.0V
5A
10A
1.0A
87.5W
0.5 W/°C
–65 to 200°C
200°C
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to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
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Document Number 6605
Issue 1