2N4913_09 Datasheet, PDF (2/3 Pages) Seme LAB – SILICON EPITAXIAL NPN TRANSISTOR

SILICON EPITAXIAL
NPN TRANSISTOR
2N4913
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)
Symbols Parameters
Test Conditions
V(BR)CEO⁽¹⁾
ICEV
Collector-Emitter
Breakdown Voltage
Collector Cut-Off Current
IC = 10mA
VCE = 40V
VBE = -1.5V
TC = 150°C
ICEO
Collector Cut-Off Current
VCE = 40V
IB = 0
ICBO
Collector Cut-Off Current
VCB = 40V
IE = 0
IEBO
Emitter Cut-Off Current
VEB = 5V
IC = 0
hFE⁽¹⁾
VBE(on)⁽¹⁾
Forward-current transfer
ratio
Base-Emitter Voltage
IC = 2.5A
IC = 5A
IC = 2.5A
VCE = 2V
VCE = 2V
VCE = 2V
VCE(sat)⁽¹⁾
Collector-Emitter Saturation
Voltage
IC = 2.5A
IC = 5A
IB = 0.25A
IB = 1.0A
DYNAMIC CHARACTERISTICS
hfe
Small-Signal Current Gain
fT
Transition Frequency
IC = 500mA
f = 1.0KHz
IC = 1.0A
f = 1.0MHz
Notes
(1) Pulse Width ≤ 300us, δ ≤ 2%
VCE = 10V
VCE = 10V
Min. Typ Max. Units
40
V
1.0
2
1.0
mA
1.0
1.0
25
100
7
1.4
1.0
V
1.5
20
4
MHz
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