2N4913_09 Datasheet, PDF (1/3 Pages) Seme LAB – SILICON EPITAXIAL NPN TRANSISTOR

SILICON EPITAXIAL
NPN TRANSISTOR
2N4913
• Low Collector Saturation Voltage.
• Hermetic TO3 Metal Package.
• Designed For General Purpose, Switching
and Power Amplifier Applications
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage
40V
VCEO
Collector – Emitter Voltage
40V
VEBO
Emitter – Base Voltage
5V
IC
Continuous Collector Current
5A
IB
Base Current
1.0A
PD
Total Power Dissipation at ^{TC = 25°C}
87.5W
Derate Above 25°C
0.5W/°C
TJ
Junction Temperature Range
-65 to +200°C
Tstg
Storage Temperature Range
-65 to +200°C
THERMAL PROPERTIES
Symbols Parameters
R_θJC
Thermal Resistance, Junction To Case
Min. Typ. Max. Units
2
°C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
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Document Number 8300
Website: http://www.semelab-tt.com
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