2N4912 Datasheet, PDF (2/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(1A,80V,25W)

SILICON EPITAXIAL
NPN TRANSISTOR
2N4912
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)
Symbols Parameters
Test Conditions
Min. Typ.
V(BR)CEO*
Collector-Emitter
Breakdown Voltage
IC = 10mA
IB = 0
80
ICEO
Collector-Emitter Cut-Off
Current
VCE = 40V
IB = 0
ICEX
Collector-Emitter Cut-Off
Current
VCE = 80V
VCE = 80V
VBE = -1.5V
VBE = -1.5V
TC = 150°C
IEBO
ICBO
Emitter-Base Cut-Off
Current
Collector-Base Cut-Off
Current
VEB = 5V
VCB = 80V
IC = 0
IE = 0
VBE*
Base-Emitter Voltage
IC = 1.0A
VCE = 1.0V
VCE(sat)*
Collector-Emitter
Saturation Voltage
IC = 1.0A
IB = 100mA
VBE(sat)*
Base-Emitter Saturated
Voltage
IC = 1.0A
IB = 100mA
hFE*
IC = 50mA
VCE = 1.0V
40
Forward-current transfer
ratio
IC = 500mA VCE = 1.0V
20
IC = 1.0A
VCE = 1.0V
10
Max.
0.5
0.1
1.0
1.0
0.1
1.3
0.6
1.3
100
Units
V
mA
V
DYNAMIC CHARACTERISTICS
fT
Transition Frequency
IC = 250mA
f = 1.0MHz
hfe
Small-Signal Current Gain ^{IC = 250mA}
f = 1.0KHz
Cobo
Output Capacitance
IE = 0
f = 1.0MHz
VCE = 10V
VCE = 10V
VCB = 10V
* Pulse Test: tp = 300us, δ ≤ 2%
3.0 22
MHz
25 70
45 100 pF
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Document Number 8104
Issue 1