2N4912 Datasheet, PDF (1/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(1A,80V,25W)

SILICON EPITAXIAL
NPN TRANSISTOR
2N4912
• Low Saturation Voltage Transistor
In A Hermetic Metal Package
• Designed For Driver Circuits, Switching
and Amplifier Applications
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VCBO _{Collector - Base Voltage}
80V
VCEO _{Collector - Emitter Voltage}
80V
VEBO _{Emitter – Base Voltage}
5V
IC
Continuous Collector Current
1.0A
IB
Base Current
1.0A
PD
Total Power Dissipation at ^{Tc = 25°C}
25W
Derate Above 25°C
0.143W/°C
TJ
Junction Temperature Range
-65 to +200°C
Tstg
Storage Temperature Range
-65 to +200°C
THERMAL PROPERTIES
Symbols Parameters
R_θJC
Thermal Resistance, Junction To Case
Min. Typ. Max. Units
7 °C/W
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Document Number 8104
Issue 1