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2N4339 Datasheet, PDF (2/2 Pages) Seme LAB – LOW NOISE N-CHANNEL JFET
2N4339
OFF ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions Min. Typ. Max.
V(BR)GSS Gate-Source Breakdown Voltage
IG = -1µA
50
IGSS
Gate Reverse Current
VGS = -30V
0.1
VGS(OFF) Gate-Source Cutoff Voltage
VDS = 15V ID = 0.1µA
-0.6
-1.8
Unit
V
nA
V
ON ELECTRICAL CHARACTERISTICS
Parameter
IDSS
Zero Gate Voltage Drain Current
Test Conditions
VDS = 15V
Min. Typ. Max. Unit
0.5
1.5 mA
SMALL SIGNAL CHARACTERISTICS
|Yfs|
|Yos|
Ciss
Crss
rds(on)
Parameter
Forward Transfer Admittance
Output Admittance
Input Capacitance
Reverse Transfer Capacitance
Drain Source On Resistance
Test Conditions
VDS = 15V f = 1.0KHz
VDS = 15V f = 1.0KHz
VDS = 0V
VGS = 0V
f = 1.0KHz
Min.
800
Typ.
Max.
2400
15
6.0
2.0
1700
Unit
µS
pF
FUNCTIONAL CHARACTERISTICS
Parameter
NF
Noise Figure
Test Conditions
VDS = 15V f = 1.0KHz
RG = 1.0M
Min. Typ. Max. Unit
1.0
dB
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
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Document Number 3887
Issue 1