2N4339 Datasheet, PDF (1/2 Pages) Seme LAB – LOW NOISE N-CHANNEL JFET

2N4339
MECHANICAL DATA
Dimensions in mm (inches)
LOW NOISE N-CHANNEL JFET
DESIGNED FOR SENSITIVE AMPLIFIER
STAGES IN A HERMETICALLY SEALED
PACKAGE FOR HIGH RELIABILITY
APPLICATIONS
5.84 (0.230)
5.31 (0.209)
4.95 (0.195)
4.52 (0.178)
0.48 (0.019)
0.41 (0.016)
dia.
2.54 (0.100)
Nom.
FEATURES
• LOW CUTOFF VOLTAGE
• HIGH INPUT IMPEDANCE
• VERY LOW NOISE
• HIGH GAIN
• CECC SCREENING OPTIONS
• JAN LEVEL SCREENING OPTIONS
31
2
APPLICATIONS:
TO-46
(TO-206AA)
Underside View
PAD 1 – Source PAD 2 – Drain
PAD 3 – Gate
• High Gain, Low Noise Amplifiers
• Low Current, Low Voltage Battery
Powered Amplifiers
• Ultrahigh Input Impedance Pre-
Amplifiers
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
V_DS
V_DG
V_GS
I_G
P_D
T_J
T_STG
Drain – Source Voltage
Drain – Gate Voltage
Gate – Source Voltage
Gate Current
Total Device Dissipation at T_AMB = 25°C
Derate above 25°C
Operating Temperature Range
Storage Temperature Range
50V
50V
50V
50mA
300mW
2mW/°C
–55 to +175°C
–65 to +200°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone [phone]. Fax [phone].
E-mail: [e-mail] Website: http://www.semelab.co.uk
Document Number 3887
Issue 1