SSG4501_15 Datasheet, PDF (8/9 Pages) SeCoS Halbleitertechnologie GmbH – Enhancement Mode Power Mos.FET

Elektronische Bauelemente
SSG4501
N Channel 7A, 30V,RDS(ON) 28m
P Channel -5.3A, -30V,RDS(ON) 50m
Enhancement Mode Power Mos.FET
P-Channel
GND
NC
Description
Typically a large storage capacitor is connected from this pin to ground to insure that the input
1.3V
or open= output enable.
tage does not sag below the minimum dropout voltage during the load
V higher than Vout in order for the device to
Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
Fig 11. Forward Characteristics of
Reverse Diode
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
Any changing of specification will not be informed individual
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