SSG4501_15 Datasheet, PDF (5/9 Pages) SeCoS Halbleitertechnologie GmbH – Enhancement Mode Power Mos.FET

Elektronische Bauelemente
N-Channel
SSG4501
N Channel 7A, 30V,RDS(ON) 28m
P Channel -5.3A, -30V,RDS(ON) 50m
Enhancement Mode Power Mos.FET
Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
Fig 11. Forward Characteristics of
Reverse Diode
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
Any changing of specification will not be informed individual
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