SST2604_15 Datasheet, PDF (4/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Power Mos.FET

Elektronische Bauelemente
SST2604
5.5A, 30V,RDS(ON) 45m
N-Channel Enhancement Mode Power Mos.FET
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
http://www.SeCoSGmbH.com/
15-Jun-2010 Rev. C
Fig 12. Gate Charge Waveform
Any changing of specification will not be informed individual
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