SST2604_15 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Power Mos.FET

Elektronische Bauelemente
SST2604
5.5A, 30V,RDS(ON) 45mΩ
N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
Description
The SST2604 utiltzed advance processing techniques to achieve the lowest
possible on-resistance, extermely efficient and cost-effectiveness device.
The SST2604 is universally used for all commercial-industrial applications.
Features
* Lower Gate Charge
* Fast Switching Characteristic
* Small Footprint & Low Profile Package
D
G
S
SOT-26
1.90REF
0.95REF 0.95REF
0.45 REF
2.60
3.00
1.2 REF
0.60 REF
1.40
1.80
0.30
0.55
2.70
0.10 Max
3.10
o
0
0.7
1.45
o
10
Dimensions in millimeters
D
D
S
6
5
4
Date Code
2604
1
2
3
D
D
G
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
3
Continuous Drain Current,VGS@4.5V
3
Continuous Drain Current,VGS@4.5V
Pulsed Drain Current^1,2
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID@TC=25^oC
ID@TC=70^oC
IDM
PD@TC=25^oC
Tj, Tstg
Ratings
30
± 20
5.5
4.4
20
2
0.016
-55~+150
Unit
V
V
A
A
A
W
W /^oC
o_C
Thermal Data
Parameter
Thermal Resistance Junction-case³
Max.
Symbol
Rthj-c
Ratings
62.5
Unit
o_{C /W}
http://www.SeCoSGmbH.com/
15-Jun-2010 Rev. C
Any changing of specification will not be informed individual
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