SMG3401_15 Datasheet, PDF (4/4 Pages) SeCoS Halbleitertechnologie GmbH – P-Channel Enhancement Mode Power Mos.FET

Elektronische Bauelemente
SMG3401
-4.2A, -30V,RDS(ON) 50m
P-Channel Enhancement Mode Power Mos.FET
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Fig 11. Normalized Maximum Transient Thermal Impedance
Any changing of specification will not be informed individual
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