SMG3401_15 Datasheet, PDF (2/4 Pages) SeCoS Halbleitertechnologie GmbH – P-Channel Enhancement Mode Power Mos.FET

Elektronische Bauelemente
SMG3401
-4.2A, -30V,RDS(ON) 50m
P-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25 C Unless otherwise specified)
o
Parameter
Symbol
Min. Typ.
Max. Unit
Drain-Source Breakdown Voltage
BVDSS
-30
_
_
V
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25^oC)
Drain-Source Leakage Current (Tj=55 ^oC)
VGS(th)
IGSS
IDSS
Static Drain-Source On-Resistance ²
RDS(ON)
Total Gate Charge ²
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time²
Rise Time
Turn-off Delay Time
Qg
Qgs
Qgd
Td(ON)
Tr
Td(Off)
-0.7
_
-1.3
V
_
_
±100
nA
_
_
-1
uA
_
_
-5
uA
_
_
50
_
_
65
m
_
_
120
_
9.4
_
_
2
_
nC
_
3
_
_
6.3
_
_
3.2
_
nS
_
38.2
_
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Tf
Ciss
Coss
Crss
_
12
_
_
954
_
_
115
_
pF
_
77
_
Gate Resistance
Rg
_
6
_
Test Condition
VGS=0V, ID=-250uA
VDS=VGS, ID=-250uA
VGS=±12V
VDS=-24V,VGS=0
VDS=-24V,VGS=0
VGS=-10V, ID=- 4.2A
VGS=-4.5V, ID=-4.0A
VGS=-2.5V, ID=-1.0A
ID=-4A
VDS=-15V
VGS=-4.5V
VDS=-15V
VGS=-10V
RG= 6
RL =3.6
VGS=0V
VDS=-15V
f=1.0MHz
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage ²
Reverse Recovery Time²
Reverse Recovery Charge
Continuous Source Current (Body Diode)
Symbol
VSD
Trr
Qrr
IS
Min.
_
_
_
_
Typ.
_
20.2
11.2
_
Max.
-1.0
_
_
-2.2
Unit
V
nS
nC
A
Test Condition
IS=-1.0A, VGS=0V.
Is=-4A, VGS=0
dl/dt=100A/uS
VD=VG=0V,VS=-1.0V
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width 300us, dutycycle 2%.
3.Surface mounted on 1 in ² copper pad of FR4 board; 270°C/W when mounted on min. copper pad.
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
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