SMG2314 Datasheet, PDF(4/4 Page) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Power Mos.FET

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SMG2314 Datasheet, PDF (4/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Power Mos.FET

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Elektronische Bauelemente

SMG2314

3.5A, 20V,RDS(ON)75m

N-Channel Enhancement Mode Power Mos.FET

Fig 7. Gate Charge Characteristics

Fig 8. Typical Capacitance Characteristics

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

Fig 11. Transfer Characteristics

http://www.SeCoSGmbH.com/

01-Jun-2002 Rev. A

Fig 12. Gate Charge Waveform

Any changing of specification will not be informed individual

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