SMG2314 Datasheet, PDF (2/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Power Mos.FET

Elektronische Bauelemente
SMG2314
3.5A, 20V,RDS(ON)75m
N-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25^oC Unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25 ^oC)
Drain-Source Leakage Current (Tj=70^oC)
Symbol
BVDSS
BVDS/ Tj
VGS(th)
IGSS
IDSS
Static Drain-Source On-Resistance
RDS(ON)
Total Gate Charge²
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time²
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Forward Transconductance
Gate Resistance
Qg
Qgs
Qgd
Td(ON)
Tr
Td(Off)
Tf
Ciss
Coss
Crss
Gfs
Rg
Min.
20
_
0.5
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
Typ.
_
0.02
_
_
_
_
_
_
4
0.7
2
6
8
10
3
230
55
40
7
1.1
Max.
_
_
1.2
±100
1
10
75
125
7
_
_
_
_
_
_
370
_
_
_
1.7
Source-Drain Diode
Parameter
Forward On Voltage ²
Reverse Recovery Time
Reverse Recovery Change
Symbol
VDS
Trr
Qrr
Min.
_
_
_
Typ.
_
16
8
Max.
1.2
_
_
Unit
V
V/ ^oC
V
nA
Test Condition
VGS=0V, ID=250uA
Reference to 25^oC, ID=1mA
VDS=VGS, ID=250uA
VGS=±12V
uA
VDS=20V,VGS=0
uA
VDS=16V,VGS=0
VGS=4.5V, ID=3.5A
VGS=2.5V, ID=1.2A
ID=3A
nC
VDS=16V
VGS=4.5V
VDD=15V
ID=1A
nS
VGS=5 V
RG=3.3
RD=15
VGS=0V
pF
VDS=20V
f=1.0MHz
S
VDS=5V, ID=3A
f=1.0MHz
Unit
V
nS
nC
Test Condition
IS=1.2 A, VGS=0V.
IS=3A,VGS=0V
dl/dt=100A/us
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width 300us, dutycycle 2%.
3.Surface mounted on FR4 board, t 10sec.
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 4