MMBT4403W_15 Datasheet, PDF (4/5 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

MMBT4403W
Elektronische Bauelemente
PNP Silicon
Switching Transistor
SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE
VCE = –10 Vdc, TA = 25°C
Bandwidth = 1.0 Hz
10
10
f = 1 kHz
8
8
6
IC = 1.0 mA, RS = 430 Ω
IC = 500 µA, RS = 560 Ω
IC = 50 µA, RS = 2.7 kΩ
4
IC = 100 µA, RS = 1.6 kΩ
6
IC = 50 µA
100 µA
4
500 µA
1.0 mA
2
RS = OPTIMUM SOURCE RESISTANCE
2
0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0
f, Frequency (kHz)
10 20
50 100
0
50 100 200
500 1 k 2 k
5 k 10 k 20 k 50 k
R_S, Source Resistance (OHMS)
Figure 8. Frequency Effects
Figure 9. Source Resistance Effects
h PARAMETERS
VCE = –10 Vdc, f = 1.0 kHz, TA = 25°C
This group of graphs illustrates the relationship between
selected from the MMBT4403W lines, and the same units
hfe and other “h” parameters for this series of transistors. To
obtain these curves, a high–gain and a low–gain unit were
were used to develop the correspondingly–numbered curves
on each graph.
1000
100 k
700
50 k
MMBT4403W UNIT 1
MMBT4403W UNIT 2
500
20 k
300
10 k
200
5k
MMBT4403W UNIT 1
2k
100
MMBT4403W UNIT 2
1k
70
500
50
200
30
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
100
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
I_C, Collector Current (mAdc)
Figure 10. Current Gain
I_C, Collector Current (mAdc)
Figure 11. Input Impedance
20
500
10
MMBT4403W UNIT 1
MMBT4403W UNIT 2
5.0
100
50
2.0
20
1.0
10
0.5
5.0
MMBT4403W UNIT 1
MMBT4403W UNIT 2
0.2
0.1
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
I_C, Collector Current (mAdc)
Figure 12. Voltage Feedback Ratio
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
2.0
1.0
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
I_C, Collector Current (mAdc)
Figure 13. Output Admittance
Any changing of specification will not be informed individual
Page 4 of 5