MMBT4403W_15 Datasheet, PDF (1/5 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

Elektronische Bauelemente
RoHS Compliant Product
MMBT4403W
PNP Silicon
Switching Transistor
COLLECTOR
3
1
BASE
3
1
A
L
Top View
BS
V
G
2
2
C
EMITTER
D
H
K
J
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
MMBT4403W = K3T, 2T
Symbol
VCEO
VCBO
VEBO
IC
Value
–40
–40
–5.0
–600
Symbol
PD
R_qJA
PD
R_qJA
TJ, Tstg
Max
200
1.8
556
200
2.4
417
– 55 to +150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(3)
(IC = –1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = –0.1 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = –0.1 mAdc, IC = 0)
Base Cutoff Current
(VCE = –35 Vdc, VEB = –0.4 Vdc)
Collector Cutoff Current
(VCE = –35 Vdc, VEB = –0.4 Vdc)
  1. FR– 5 = 1.0 0.75 0.062 in.
  2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
v v 3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBEV
ICEX
SOT-323
Dim Min Max
A 1.800 2.200
B 1.150 1.350
C 0.800 1.000
D 0.300 0.400
G 1.200 1.400
H 0.000 0.100
J 0.100 0.250
K 0.350 0.500
L 0.590 0.720
S 2.000 2.400
V 0.280 0.420
All Dimension in mm
Min
Max
Unit
Vdc
–40
—
Vdc
–40
—
Vdc
–5.0
—
µAdc
—
–0.1
µAdc
—
–0.1
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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