MMBT2222FW Datasheet, PDF (4/5 Pages) SeCoS Halbleitertechnologie GmbH – General Purpose Transistor

Elektronische Bauelemente
MMBT2222FW
NPN Silicon
General Purpose Transistor
200
IC/IB = 10
100
TJ = 25°C
70
50
tr @ VCC = 30 V
td @ VEB(off) = 2.0 V
30
td @ VEB(off) = 0
20
10
7.0
5.0
3.0
2.0
5.0 7.0 10
20 30 50 70 100
IC, Collector Current (mA)
200 300 500
Figure 5. Turn – On Time
10
RS = OPTIMUM
8.0
IC = 1.0 mA, RS = 150 Ω
500 µA, RS = 200 Ω
RS = SOURCE
RS = RESISTANCE
100 µA, RS = 2.0 kΩ
6.0
50 µA, RS = 4.0 kΩ
4.0
2.0
0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
f, Frequency (kHz)
50 100
Figure 7. Frequency Effects
30
20
Ceb
10
7.0
5.0
Ccb
3.0
2.0
0.1
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
Reverse Voltage (V)
Figure 9. Capacitances
20 30 50
500
300
200
t′_s = ts – 1/8 tf
100
70
50
tf
30
20
VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
10
7.0
5.0
5.0 7.0 10
20 30 50 70 100
IC, Collector Current (mA)
200 300 500
Figure 6. Turn – Off Time
10
f = 1.0 kHz
8.0
IC = 50 µA
100 µA
6.0
500 µA
1.0 mA
4.0
2.0
0
50 100 200
500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
RS, Source Resistance (OHMS)
Figure 8. Source Resistance Effects
500
VCE = 20 V
TJ = 25°C
300
200
100
70
50
1.0
2.0 3.0 5.0 7.0 10
20 30
IC, Collector Current (mA)
50 70 100
Figure 10. Current–Gain Bandwidth Product
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 4 of 5