MMBT2222FW Datasheet, PDF (1/5 Pages) SeCoS Halbleitertechnologie GmbH – General Purpose Transistor

Elektronische Bauelemente
MMBT2222FW
NPN Silicon
General Purpose Transistor
FEATURES
RoHS Compliant Product
· Epitaxial Planar Die Construction
· Complementary PNP Type Available
(MMBT2907FW)
· Ideal for Medium Power Amplification and
Switching
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
A
L
3
Top View
1
2
BS
V
G
C
D
H
K
MAXIMUM RATINGS
Rating
Symbol
MMBT2222FW
Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IC
40
Vdc
75
Vdc
6
Vdc
600
mAdc
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Symbol
PD
Max
Unit
150
mW
1.8
mW/°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
R_qJA
PD
556
°C/W
300
mW
2.4
mW/°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
R_qJA
TJ, Tstg
417
– 55 to +150
°C/W
°C
MMBT2222FW = 1P
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
J
Min
SOT-523
Dim Min Max
A 1.500 1.700
B 0.780 0.820
C 0.800 0.820
D 0.280 0.320
G 0.900 1.100
H 0.000 0.100
J 0.100 0.200
K 0.350 0.410
L 0.490 0.510
S 1.500 1.700
V 0.280 0.320
All Dimension in mm
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0)
V(BR)CEO
40
—
Vdc
Collector – Base Breakdown Voltage (IC = 10 mAdc, IE = 0)
V(BR)CBO
75
—
Vdc
Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0)
V(BR)EBO
5.0
—
Vdc
Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
Collector Cutoff Current (VCB = 60 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0, TA = 125°C)
ICEX
—
10
nAdc
ICBO
—
0.01
µAdc
—
10
Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0)
Base Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
IEBO
—
100
nAdc
IBL
—
20
nAdc
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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