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| SMG2358N_15 Datasheet, PDF (3/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Mos.FET | |||
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Elektronische Bauelemente
CHARACTERISTIC CURVES
SMG2358N
3.1 A, 60 V, RDS(ON) 92 mï
N-Channel Enhancement Mode Mos.FET
http://www.SeCoSGmbH.com/
29-Jul-2013 Rev. D
Any changes of specification will not be informed individually.
Page 3 of 4
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