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| SMG2358N_15 Datasheet, PDF (2/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Mos.FET | |||
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Elektronische Bauelemente
SMG2358N
3.1 A, 60 V, RDS(ON) 92 mï
N-Channel Enhancement Mode Mos.FET
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current 1
Drain-Source On-Resistance 1
Forward Transconductance 1
Diode Forward Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS(th)
IGSS
IDSS
ID(on)
RDS(ON)
gfs
VSD
Ciss
Coss
Crss
1
-
-
-
-
-
-
-
5
-
-
-
-
-
-
10
-
0.74
Dynamic 2
-
330
-
31
-
27
-
±100
1
25
-
92
107
-
-
-
-
-
V VDS=VGS, ID=250μA
nA VDS=0, VGS= ±20V
μA VDS=48V, VGS=0
VDS=48V, VGS=0, TJ= 55°C
A VDS =5V, VGS=10V
m⦠VGS=10V, ID=2.5A
VGS=4.5V, ID=2A
S VDS=15V, ID=2.5A
V IS=1A, VGS=0
VDS=15V,
pF VGS=0,
f=1MHz
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
-
4
-
VDS=30V,
Qgs
-
1
-
nC VGS=4.5V,
Qgd
-
1.7
-
ID=2.5A
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
-
3
-
VDS=30V,
Tr
-
6
-
VGEN=10V,
nS RL=12â¦,
Td(off)
-
17
-
ID=2.5A,
Tf
-
5
-
RGEN=6â¦
Notes
1 Pulse testï¼PWâ¦300μs duty cycleâ¦2%.
2 Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
29-Jul-2013 Rev. D
Any changes of specification will not be informed individually.
Page 2 of 4
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