PZT2222A Datasheet, PDF (3/4 Pages) NXP Semiconductors – NPN switching transistor

Elektronische Bauelemente
PZT2222A
NPN Silicon
General Purpose Transistor
200
100
70
50
30
20
10
7.0
5.0
3.0
2.0
5.0 7.0 10
I_C/I_B = 10
T_J = 25°C
t_r @ V_CC = 30 V
t_d @ V_EB(off) = 2.0 V
t_d @ V_EB(off) = 0
20 30 50 70 100 200 300 500
I_C, COLLECTOR CURRENT (mA)
Figure 5. Turn–On Time
500
300
200
t′_s = t_s - 1/8 t_f
100
70
50
t_f
30
20
V_CC = 30 V
I_C/I_B = 10
I_B1 = I_B2
T_J = 25°C
10
7.0
5.0
5.0 7.0 10
20 30 50 70 100 200 300 500
I_C, COLLECTOR CURRENT (mA)
Figure 6. Turn–Off Time
10
R_S = OPTIMUM
8.0
I_C = 1.0 mA, R_S = 150 Ω
500 μA, R_S = 200 Ω
R_S = SOURCE
R_S = RESISTANCE
100 μA, R_S = 2.0 kΩ
6.0
50 μA, R_S = 4.0 kΩ
4.0
2.0
0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
f, FREQUENCY (kHz)
50 100
Figure 7. Frequency Effects
10
f = 1.0 kHz
8.0
I_C = 50 μA
100 μA
6.0
500 μA
1.0 mA
4.0
2.0
0
50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
R_S, SOURCE RESISTANCE (OHMS)
Figure 8. Source Resistance Effects
30
20
C_eb
10
7.0
5.0
C_cb
3.0
2.0
0.1
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
REVERSE VOLTAGE (VOLTS)
Figure 9. Capacitances
20 30 50
500
V_CE = 20 V
T_J = 25°C
300
200
100
70
50
1.0
2.0 3.0 5.0 7.0 10
20 30
I_C, COLLECTOR CURRENT (mA)
50 70 100
Figure 10. Current–Gain Bandwidth Product
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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