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| PZT2222A Datasheet, PDF (1/4 Pages) NXP Semiconductors – NPN switching transistor | |||
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Elektronische Bauelemente
RoHS Compliant Product
PZT2222A
NPN Silicon
General Purpose Transistor
C
FEATURES
Power dissipation
E
C
B
P CM : 1 WËTamb=25ÄË
Collector current
I CM : 0.6 A
Collector-base voltage
V (BR)CBO : 75 V
Operating and storage junction temperature range
T JËTstg: -55Ä to +150Ä
SOT-223
1. BASE
2. COLLECTOR
3. EMITTER
f
5
5
0D[
efe
efe
f
efe
f
123
Unit : mm
ELECTRICAL CHARACTERISTICSËTamb=25Ä unless otherwise specifiedË
Parameter
Symbol
Test conditions
MIN
MAX
Collector-base breakdown voltage
V(BR)CBO
Ic= 10ÂAË IE=0
75
Collector-emitter breakdown voltage
V(BR)CEO
Ic= 10mAË IB=0
40
Emitter-base breakdown voltage
V(BR)EBO
IE=10ÂAË IC=0
6
Collector cut-off current
ICBO
VCB=60V , IE=0
0. 01
Emitter cut-off current
IEBO
VEB= 3V , IC=0
0. 01
hFE(1)
VCE=10V, IC= 0.1mA
35
hFE(2)
VCE=10V, IC= 1mA
50
DC current gain
hFE(3)
VCE=10V, IC= 10mA
75
hFE(4)
VCE=10V, IC= 150mA
100
300
hFE(5)
VCE=1V, IC= 150mA
50
hFE(6)
VCE=10V, IC= 500mA
40
VCE(sat) IC=500 mA, IB= 50mA
1
Collector-emitter saturation voltage
VCE(sat) IC=150 mA, IB= 15mA
0.3
Base-emitter saturation voltage
VBE(sat) IC=500 mA, IB= 50mA
2.0
VBE(sat) IC=150 mA, IB=15mA
0.6
1.2
Transition frequency
VCE=20V, IC= 20mA
fT
f=100MHz
300
VCB=10V, IE= 0
Output Capacitance
Cob
f=1MHz
8
Delay time
Rise time
Storage time
Fall time
td
VCC=30V, IC=150mA
10
tr
VBE(off)=0.5V,IB1=15mA
25
tS
VCC=30V, IC=150mA
225
tf
IB1= IB2= 15mA
60
UNIT
V
V
V
ÂA
ÂA
V
V
V
V
MHz
pF
nS
nS
nS
nS
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 1 of 4
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