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| MMDT3946 Datasheet, PDF (3/5 Pages) Transys Electronics – CMOPLEMENTARY NPN/PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR | |||
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Elektronische Bauelemente
MMDT3946
NPN / PNP
Multi-Chip Transistor
ELECTRICAL CHARACTERISTICS OF PNP 3906 at Ta = 25°C
CHARACTERISTIC
TEST CONDITION
SYMBOL
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Output Capacitance
Transition Frequency
Noise Figure
Delay TIme
Rise Time
Storage Time
Fall Time
IC=-10μA, IE=0
IC = -1mA, IB = 0
IE=-10μA, IC=0
VCB=-30V, IE=0
VEB=-5V, IC=0
VCE=-1V, IC=-0.1mA
VCE=-1V, IC=-1mA
VCE=-1V, IC=-10mA
VCE=-1V, IC=-50mA
VCE=-1V, IC=-100mA
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
VCB=-5V, IE=0, f=1MHz
VCE=-20V, IC=-10mA, f=100MHz
VCE=-5V, IC=-0.1mA, f=1kHz
Rg=1Kâ¦,
VCC=-3V, VBE=-0.5V,
IC=-10mA, IB1=- IB2 = -1mA
VCC=-3V,
IC=-10mA, IB1=- IB2 = -1mA
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
hFE(3)
hFE(4)
hFE(5)
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
Cob
fT
NF
Td
Tr
Ts
Tf
MIN.
-40
-40
-5
60
80
100
60
30
-0.65
250
MAX.
-0.05
-0.05
300
-0.25
-0.4
-0.85
-0.95
4.5
4
35
35
225
75
UNIT
V
V
V
μA
μA
V
V
V
V
pF
MHz
dB
nS
nS
nS
nS
14-Apr-2010 Rev. E
Page 3 of 5
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