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| MMDT3946 Datasheet, PDF (2/5 Pages) Transys Electronics – CMOPLEMENTARY NPN/PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR | |||
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Elektronische Bauelemente
MMDT3946
NPN / PNP
Multi-Chip Transistor
ELECTRICAL CHARACTERISTICS OF NPN 3904 at Ta = 25°C
CHARACTERISTIC
TEST CONDITION SYMBOL MIN.
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
Transition Frequency
Noise Figure
Delay TIme
Rise Time
Storage Time
Fall Time
IC=10μA, IE=0
IC = 1 mA, IB = 0
IE=10μA, IC=0
VCB=30V, IE=0
VEB=30V, IB=0
VEB=5V, IC=0
VCE=1V, IC=0.1mA
VCE=1V, IC=1mA
VCE=1V, IC=10mA
VCE=1V, IC=50mA
VCE=1V, IC=100mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
VCB=5V, IE=0, f=1MHz
VCE=20V, IC=20mA, f=100MHz
VCE=5V, IC=0.1mA, f=1kHz
Rg=1Kâ¦,
VCC=3V, VBE=0.5V,
IC=10mA, IB1=- IB2 = 1mA
VCC=3V,
IC=10mA, IB1=- IB2 = 1mA
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE(1)
hFE(2)
hFE(3)
hFE(4)
hFE(5)
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
Cob
fT
NF
Td
Tr
Ts
Tf
60
40
5
40
70
100
60
30
0.65
300
MAX.
0.05
0.5
0.05
300
0.2
0.3
0.85
0.95
4
5
35
35
200
50
UNIT
V
V
V
μA
μA
μA
V
V
V
V
pF
MHz
dB
nS
nS
nS
nS
ABSOLUTE MAXIMUM RATINGS OF PNP 3906 at Ta = 25°C
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Currrent â Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
SYMBOL
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
VALUE
-40
-40
-5
-0.2
0.2
150
-55~150
UNITS
V
V
V
A
W
â
â
14-Apr-2010 Rev. E
Page 2 of 5
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