MMBTA13_15 Datasheet, PDF (3/3 Pages) SeCoS Halbleitertechnologie GmbH – Darlington Amplifier Transistor NPN Silicon

Elektronische Bauelemente
MMBTA13
MMBTA14
Darlington Amplifier Transistor NPN Silicon
20
4.0
VCE = 5.0 V
10
TJ = 25°C
f = 100 MHz
2.0 ^{TJ = 25°C}
7.0
Cibo
1.0
5.0
Cobo
0.8
0.6
3.0
0.4
2.0
0.04
0.1 0.2 0.4 1.0 2.0 4.0 10 20 40
VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Capacitance
0.2
0.5 1.0 2.0
0.5 10 20
50 100 200 500
IC, COLLECTOR CURRENT (mA)
Figure 7. High Frequency Current Gain
200Ăk
100Ăk
70Ăk
50Ăk
TJ = 125°C
25°C
30Ăk
20Ăk
10Ăk
7.0Ăk
5.0Ăk
-ā55°C
3.0Ăk
VCE = 5.0 V
2.0Ăk
5.0 7.0 10
20 30 50 70 100 200 300 500
IC, COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
3.0
2.5
IC = 10 mA 50 mA
2.0
250 mA 500 mA
TJ = 25°C
1.5
1.0
0.5
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000
IB, BASE CURRENT (µA)
Figure 9. Collector Saturation Region
1.6
TJ = 25°C
1.4
VBE(sat) @ IC/IB = 1000
1.2
VBE(on) @ VCE = 5.0 V
1.0
0.8
VCE(sat) @ IC/IB = 1000
-ā1.0 _{*APPLIES FOR IC/IB ≤ hFE/3.0}
-ā2.0 ^*RqVC ^{FOR VCE(sat)}
-ā3.0
-ā4.0
q_VB FOR VBE
-ā5.0
25°C TO 125°C
-ā55°C TO 25°C
25°C TO 125°C
-ā55°C TO 25°C
0.6
5.0 7.0
10
20 30 50 70 100 200 300
IC, COLLECTOR CURRENT (mA)
-ā6.0
500
5.0 7.0 10
20 30 50 70 100 200 300 500
IC, COLLECTOR CURRENT (mA)
Figure 10. “On” Voltages
Figure 11. Temperature Coefficients
http://www.SeCoSGmbH.com
01-Jun-2004 Rev. B
Any changing of specification will not be informed individual
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