MMBTA13_15 Datasheet, PDF (2/3 Pages) SeCoS Halbleitertechnologie GmbH – Darlington Amplifier Transistor NPN Silicon

Elektronische Bauelemente
MMBTA13
MMBTA14
Darlington Amplifier Transistor NPN Silicon
500
200
100
50
20
10
5.0
10 20
2.0
BANDWIDTH = 1.0 Hz
RS ≈ 0
1.0
0.7
0.5
10 µA
0.3
0.2
100 µA
0.1
IC = 1.0 mA
0.07
0.05
0.03
0.02
50 100 200 500 1Ăk 2Ăk 5Ăk 10Ăk 20Ăk 50Ăk 100Ăk
10 20
f, FREQUENCY (Hz)
Figure 1. Noise Voltage
BANDWIDTH = 1.0 Hz
IC = 1.0 mA
100 µA
10 µA
50 100 200 500 1Ăk 2Ăk 5Ăk 10Ăk 20Ăk 50Ăk 100Ăk
f, FREQUENCY (Hz)
Figure 2. Noise Current
200
100 ^{BANDWIDTH = 10 Hz TO 15.7 kHz}
70 IC = 10 µA
50
30
100 µA
20
1.0 mA
14
12
10
8.0
6.0
4.0 _{IC = 1.0 mA}
2.0
BANDWIDTH = 10 Hz TO 15.7 kHz
10 µA
100 µA
10
1.0 2.0
5.0 10 20 50 100 200
RS, SOURCE RESISTANCE (kΩ)
500 1000
Figure 3. Total Wideband Noise Voltage
0
1.0 2.0
5.0 10 20 50 100 200
RS, SOURCE RESISTANCE (kΩ)
500 1000
Figure 4. Wideband Noise Figure
1.0
0.7
0.5 ^{D = 0.5}
0.2
0.3
0.2
0.1
0.1
0.07
0.05
0.03
0.02
0.01
0.1 0.2
0.05
0.5
SINGLE PULSE
SINGLE PULSE
Z_θJC(t) = r(t) • R_{θJCąTJ(pk)} - TC = P(pk) Z_θJC(t)
Z_θJA(t) = r(t) • R_{θJAąTJ(pk)} - TA = P(pk) Z_θJA(t)
1.0 2.0
5.0 10
20
50 100 200
t, TIME (ms)
Figure 5. Thermal Response
500 1.0Ăk 2.0Ăk
5.0Ăk 10Ăk
http://www.SeCoSGmbH.com
01-Jun-2004 Rev. B
Any changing of specification will not be informed individual
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