MMBT5401 Datasheet, PDF (3/3 Pages) Transys Electronics – PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Elektronische Bauelemente
MMBT5401
PNP Silicon
General PurposeTransistor
CHARACTERISTICS CURVE
1.0
0.9 ^{TJ = 25 C}
0.8
0.7
0.6 ^{VBE(sat)@ IC / IB= 10}
0.5
0.4
0.3
0.2 V_CE(sat)@ I_C / I_B = 10
0.1
0
0.1 0.20.3 0.5 1.0 2.03.0 5.0 10 20 30 50 100
I_C, COLLECTOR CURRENT (mA)
Figure 4. "On" Voltages
2.5
2.0
T_J = -55 C to 135 C
1.5
1.0
0.5
θ_VC for V_CE(sat)
0
-0.5
-1.0
-1.5
-2.0
θ_VB for V_BE(sat)
-2.5
0.1 0.20.3 0.5 1.0 2.03.0 5.0 10 20 30 50 100
I_C, COLLECTOR CURRENT (mA)
Figure 5. Temperature Coefficients
10.2 V
V_BB
+ 8.8 V
V_CC
-30 V
V_in
100
3.0k R_C
10 μs
0.25μF _RB
V_out
INPUT PULSE
5.1k
t_r, _ft10 ns
V_in
DUTY CYCLE = 1.0%
100 1N914
Values Shown are for I_C @ 10 mA
Figure 6. Switching Time Test Circuit
100
70
T_J = 25 C
50
30
20
C _ibo
10
7.0
5.0
C _obo
3.0
2.0
1.0
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20
V_R, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitances
1000
700 ^IC^{/ I}B^{= 10}
500 ^TJ ^{= 25 C}
300
200
t_r @ V_CC = 120 V
t_r @ V_CC= 30 V
100
70
50
30
20
t _d @ V_BE(off) = 1.0 V
V_CC= 120 V
10
0.20.3 0.5 1.0 2.03.0 5.0 10 20 30 50
I_C, COLLECTOR CURRENT (mA)
Figure 8. Turn-On Time
100 200
2000
1000 _{IC/ IB= 10}
700 _{TJ = 25 C}
500
300
t _f @ V_CC = 30 V
t_f @ _CV_C = 120 V
200
t_s@ V_CC= 120 V
100
70
50
30
20
0.20.3 0.5
1.0 2.0 3.0 5.0 10 20 30 50
I_C, COLLECTOR CURRENT (mA)
Figure 9. Turn-Off Time
100 200
01-June-2002 Rev. A
Page 3 of 3