MMBT5401 Datasheet, PDF (1/3 Pages) Transys Electronics – PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Elektronische Bauelemente
MMBT5401
PNP Silicon
General PurposeTransistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Ideal for medium power amplification and switching
MARKING
2L
ABSOLUTE MAXIMUM RATINGS
Parameter
Collector to Emitter Voltage
Collector to Base Voltage
Emitter to Base Voltage
Collector Current - Continuous
Symbol Ratings
V_CEO
V_CBO
V_EBO
I_C
-150
-160
-5.0
-500
Unit
V
V
V
mA
SOT-23
A
L
3
Top View
CB
1
1
2
K
E
3
2
D
F
G
H
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.80 3.00
2.25 2.55
1.20 1.40
0.90 1.15
1.80 2.00
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.10 REF.
0.55 REF.
0.08 0.15
0.5 REF.
0.95 TYP.
THERMAL CHARACTERISTICS
Parameter
Symbol
Total Power Dissipation
Thermal Resistance, Junction to Ambient
Total Power Dissipation
Thermal Resistance, Junction to Ambient
Junction, Storage Temperature
T_A = 25°C
Derate above 25°C
Alumina Substrate,⁽²⁾ T_A = 25°C
Derate above 25°C
P_D
R_θJA
P_D
R_θJA
T_J, T_STG
Ratings
225
1.8
556
300
2.4
417
-55 ~ +150
Unit
mW
mW / ℃
℃/W
mW
mW / ℃
℃/W
℃
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Test Conditions
Symbol
Off Characteristics
Collector–Emitter Breakdown Voltage
I_C = -1.0 mA, I_B = 0
BV_CEO
Collector–Base Breakdown Voltage
I_C = -100 μA, I_E = 0
BV_CBO
Emitter–Base Breakdown Voltage
I_E = -10 μA, I_C = 0
BV_EBO
Collector Cutoff Current
On Characteristics
V_CB = -120 V, I_E = 0
V_CB = -120 V, I_E = 0, T_A = 100°C
I_CES
DC Current Gain
I_C = –1.0 mA, V_CE = –5.0 V
I_C = –10 mA, V_CE = –5.0 V
h_FE
I_C = –50 mA, V_CE = –5.0 V
Collector–Emitter Saturation Voltage
I_C = –10 mA, I_B = –1.0 mA
I_C = –50 mA, I_B = –5.0 mA
V_CE(sat)
Min.
-150
-160
-5.0
-
80
100
50
-
Max.
-
-
-
-100
-100
-
200
-
-0.2
-0.5
Unit
V
V
V
nA
μA
-
V
Base–Emitter Saturation Voltage
Small Signal Characteristics
I_C = –10 mA, I_B = –1.0 mA
I_C = –50 mA, I_B = –5.0 mA
V_BE(sat)
-
-1.0
-1.0
V
Current-Gain - Bandwidth Product
I_C =-10 mA, V_CE = -10 V, f = 100 MHz
f_T
100
-
MHz
Output Capacitance
V_CB = -10 V, I_E = 0, f = 1.0 MHz
C_OBO
-
6.0
pF
Small Signal Current Gain
I_C = -1.0 mA, V_CE =-10 V, f = 1.0 kHz
h_FE
50
200
-
Noise Figure
I_C = –200 μA, V_CE = –5.0 V, R_S = 10 Ω, f = 1.0 kHz
NF
-
8.0
dB
Note:
1. FR-5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
01-June-2002 Rev. A
Page 1 of 3