2N7002T Datasheet, PDF (3/3 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Elektronische Bauelemente
2N7002T
115 mAMPS, 60VOLTS, RDS(on)=7.5 W
Small Signal MOSFET
TYPICAL ELECTRICAL CHARACTERISTICS
1
0.9
V_GS = 10,7,6V
0.8
0.7
0.6
V_GS = 5V
V_GS = 4V
0.5
0.4
0.3
V_GS = 3V
0.2
0.1
0
0
1
2
3
4
5
V_DS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 On-Region Characteristics
2.2
V_GS = 3V
1.8
1.4
V_GS = 4V
1
0.6
0
V_GS = 5, 6, 7, 10V
0.2
0.4
0.6
0.8
1.0
I_D, DRAIN-SOURCE CURRENT (A)
Fig. 2 On-Resistance Variation with Gate Voltage and Drain-Source Current
1.2
1.1
1
0.9
0.8
0.7
-50
-25
0
25
50
75
100
125
150
T_J, JUNCTION TEMPERATURE (°C)
Fig. 3 Gate Threshold Variation with Temperature
2.2
2
V_GS = 10V
I_D = 500mA
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
-50
-25
0
25
50
75
100
125
150
T_J, JUNCTION TEMPERATURE (°C)
Fig. 4 On-Resistance Variation with Temperature
60
50
40
30
20
10
0
0
C_iss
C_oss
C_rss
5
10
15
20
25
V_DS, DRAIN-SOURCE VOLTAGE (V)
Fig. 5 Typical Capacitance
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
I_D = 50mA
2
4
6
8
10
V_GS, GATE-SOURCE VOLTAGE (V)
Fig. 6 On-Resistance vs. Gate-Source Voltage
Any changing of specification will not be informed individual
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