2N7002T Datasheet, PDF (1/3 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Elektronische Bauelemente
2N7002T
115 mAMPS, 60VOLTS, RDS(on)=7.5 W
Small Signal MOSFET
RoHS Compliant Product
Small Signal MOSFET
115 mAmps, 60 Volts
N–Channel SOT–523
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Drain–Gate Voltage (RGS = 1.0 MΩ)
Gate–Source Voltage
– Continuous
– Non–repetitive (tp ≤ 50 µs)
Symbol Value Unit
VDSS
60
Vdc
VDGR
60
Vdc
VGS
±ā20
Vdc
VGSM
±ā40
Vpk
N–Channel
3
1
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board
(Note 3.) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol Max Unit
PD
150
mW
1.8 mW/°C
R_θJA
TJ, Tstg
833
–ā55 to
+150
°C/W
°C
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.
3. FR–5 = 1.0 x 0.75 x 0.062 in.
4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.
SOT-523
Dim Min Max
A 1.500 1.700
B 0.750 0.850
C 0.600 0.900
D 0.150 0.300
G 0.900 1.100
H 0.000 0.100
J 0.100 0.200
K 0.100 0.300
L 0.400 0.600
S 1.450 1.750
V 0.250 0.350
All Dimension in mm
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
A
L
3
BS
1
2
V
G
C
D
H
2
3
1
2
2
SOT–523
MARKING DIAGRAM
& PIN ASSIGNMENT
Drain
3
72
1
2
Gate
Source
72 = Device Code
K
J
Any changing of specification will not be informed individual
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