UMD3N Datasheet, PDF (2/2 Pages) SeCoS Halbleitertechnologie GmbH – Multi-Chip Digital Transistor

Elektronische Bauelemente
UMD3N
NPN-PNP built-in resistors
Multi-Chip Digital Transistor
DTr1 (NPN)
100
VO=0.3V
50
20
10
5
Ta=−40˚C
25˚C
2
100˚C
1
500m
200m
100m
100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m
OUTPUT CURRENT : IO (A)
Fig.1 Input voltage vs. output current
(ON characteristics)
DTr2 (PNP)
−100
−50
VO=−0.3V
−20
−10
−5
Ta=−40˚C
25˚C
100˚C
−2
−1
−500m
−200m
−100m
−100µ −200µ −500µ−1m −2m −5m −10m −20m −50m −100m
OUTPUT CURRENT : IO (A)
Fig.5 Input voltage vs. output current
(ON characteristics)
10m
5m
VCC=5V
2m
1m
Ta=100˚C
25˚C
500µ
−40˚C
200µ
100µ
50µ
20µ
10µ
5µ
2µ
1µ
0 0.5 1 1.5 2 2.5 3
INPUT VOLTAGE : VI (off) (V)
Fig.2 Output current vs. input voltage
(OFF characteristics)
1
lO/lI=20
500m
200m
Ta=100˚C
25˚C
100m
−40˚C
50m
20m
10m
5m
2m
1m
100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m
OUTPUT CURRENT : IO (A)
Fig.4 Output voltage vs. output
current
1k
VO=5V
500
Ta=100˚C
200
25˚C
−40˚C
100
50
20
10
5
2
1
100µ 200µ 500µ1m 2m 5m 10m 20m 50m100m
OUTPUT CURRENT : IO (A)
Fig.3 DC current gain vs. output
current
−10m
−5m
Ta=100˚C
−2m
25˚C
−1m
−40˚C
−500µ
VCC=−5V
−200µ
−100µ
−50µ
−20µ
−10µ
−5µ
−2µ
−1µ
0 −0.5 −1 −1.5 −2 −2.5 −3
INPUT VOLTAGE : VI (off) (V)
Fig.6 Output current vs. input voltage
(OFF characteristics)
1k
VO=−5V
500
Ta=100˚C
200
25˚C
−40˚C
100
50
20
10
5
2
1
−100µ −200µ −500µ −1m −2m −5m −10m −20m −50m−100m
OUTPUT CURRENT : IO (A)
Fig.7 DC current gain vs. output
current
http://www.SeCoSGmbH.com
01-Jan-2006 Rev. B
−1
lO/lI=20
−500m
Ta=100˚C
−200m
25˚C
−40˚C
−100m
−50m
−20m
−10m
−5m
−2m
−1m
−100µ −200µ −500µ −1m −2m
−5m −10m −20m −50m −100m
OUTPUT CURRENT : IO (A)
Fig.8 Output voltage vs. output
current
Any changing of specification will not be informed individual
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