UMD3N Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – Multi-Chip Digital Transistor

Elektronische Bauelemente
UMD3N
NPN-PNP built-in resistors
Multi-Chip Digital Transistor
Features
SOT-363
.055(1.40)
8^o
.047(1.20)
.026TYP
0^o
(0.65TYP)
6
5
4
.021REF
(0.525)REF
* DTA114E and DTC114E transistors are
built-in a SOT-363 package.
* Transistor elements are independent,
eliminating interference.
* Mounting cost and area can be cut in half.
MARKING:D3
(3) (2) (1)
R1 R2
DT r2
DT r1
R2 R1
(4) (5) (6)
R1=R2=10K
.096(2.45)

.085(2.15)
1
2
3
.014(0.35)
.006(0.15)
.087(2.20)
.079(2.00)
.018(0.46)
.010(0.26)
.043(1.10)
.035(0.90)
.053(1.35)
.045(1.15)
.006(0.15)
.003(0.08)
.004(0.10)
.000(0.00)
.039(1.00)
.035(0.90)
Dimensions in inches and (millimeters)
Electrical Characteristics( Tamb=25^OC unless otherwise specified)
Parameter
Symbol
Limits
Unit
Supply voltage
V_CC
50
V
Input voltage
Output current
V_IN
I_O
I_C(MAX)
-10~40
V
50
mA
100
Power dissipation
Pd
150(TOTAL)
mW
Junction temperature
Tj
150
℃
Storage temperature
Tstg
-55~150
℃
Electrical characteristics (Ta=25℃)
Parameter
Symbol
Min.
Typ
Max.
Unit
Conditions
Input voltage
Output voltage
V_I(off)
V_I(on)
3
V_O(on)
0.5
V
0.3
V
V_CC=5V ,I_O=100μA
V_O=0.3V ,I_O=10mA
I_O/I_I=10mA/0.5mA
Input current
I_I
0.88
mA
V_I=5V
Output current
DC current gain
I_O(off)
G_I
30
0.5
µA
V_CC=50V, V_I=0
V_O=5V,I_O=5mA
Input resistance
R₁
7
10
13
KΩ
Resistance ratio
R₂/R₁
0.8
1
1.2
Transition frequency
f_T
250
MHz
V_CE=10V ,I_E=-5mA,f=100MHz
http://www.SeCoSGmbH.com
01-Jan-2006 Rev. B
Any changing of specification will not be informed individual
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