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| SUM6K1N Datasheet, PDF (2/3 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode MOSFET | |||
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Elektronische Bauelemente
SUM6K1N
0.1A , 30V , RDS(ON) 8 ïï
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Teat Conditions
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Gate-Threshold Voltage
Drain-Source On-Resistance
Forward Transconductance
Static
VDS
30
-
-
V ID=10uA, VGS=0
IDSS
-
-
1
uA VDS=30V, VGS=0
IGSS
-
-
±1
uA VDS=0, VGS=±20V
VGS(th)
0.8
-
1.5
V VDS=3V, ID=100uA
-
RDS(ON)
-
-
8
â¦
VGS=4V, ID=10mA
-
13
VGS=2.5V, ID=1mA
gfs
20
-
-
S VDS=3V, ID=10mA
Dynamic 1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
-
13
-
VDS=5V,
COSS
-
9
-
nC VGS=0,
CRSS
-
4
-
f=1MHz
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
-
15
-
VDD=5V,
Tr
-
35
-
VGS=5V,
nS Rg=10â¦,
Td(off)
-
80
-
RL=500â¦,
Tf
-
80
-
ID=10mA
Notes:
1. These parameters have no way to verify
http://www.SeCoSGmbH.com/
24-Sep-2013 Rev. B
Any changes of specification will not be informed individually.
Page 2 of 3
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