SUM6K1N Datasheet, PDF (1/3 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode MOSFET

Elektronische Bauelemente
SUM6K1N
0.1A , 30V , R_DS(ON) 8 
N-Channel Enhancement Mode MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high
cell density trench process to provide low R_DS(on) and to
ensure minimal power loss and heat dissipation.
FEATURES
 Low R_DS(on) provides higher efficiency and extends
battery life
 Low thermal impedance copper leadframe SOT-363
saves board space
 Fast switching speed
 High performance trench technology
APPLICATION
DC-DC converters and power management in portable
and battery-powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
MARKING
K1
PACKAGE INFORMATION
Package
MPQ
SOT-363
3K
Leader Size
7 inch
SOT-363
A
E
L
B
F
C
H
DG
K
J
REF.
A
B
C
D
E
F
Millimeter
Min.
1.80
1.80
1.15
Max.
2.20
2.45
1.35
0.80 1.10
1.10 1.50
0.10 0.35
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.100 REF.
0.525 REF.
0.08 0.25
8°
0.650 TYP.
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
Continuous Drain Current ¹
Power Dissipation ¹
Maximum Junction to Ambient ¹
Operating Junction and Storage Temperature Range
V_GSS
I_D
P_D
R_JA
T_J, T_STG
Ratings
30
±20
0.1
0.15
833
150, -55~150
Unit
V
V
A
W
°C / W
°C
http://www.SeCoSGmbH.com/
24-Sep-2013 Rev. B
Any changes of specification will not be informed individually.
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