SUM3439 Datasheet, PDF (2/4 Pages) SeCoS Halbleitertechnologie GmbH – N & P-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente
SUM3439
N-Ch: 0.75A, 20V, R_DS(ON) 380 mΩ
P-Ch: -0.66A, -20V, R_DS(ON) 520 mΩ
N & P-Ch Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol Ch Min.
Typ.
Max.
Static Characteristics
N
20
-
-
Drain-Source Breakdown Voltage BVDSS
P
-20
-
-
Gate Threshold Voltage ²
N 0.35
-
1.1
VGS(th)
P -0.35
-
-1.1
Forward Transconductance ²
N
-
gFS
1.6
-
P
-
1.2
-
Gate-Body Leakage Current
N
-
IGSS
P
-
-
±20
-
±20
N
-
Zero Gate Voltage Drain Current
IDSS
P
-
-
1
-
-1
-
-
380
N
-
-
450
Drain-Source On-Resistance ²
RDS(ON)
-
-
800
-
-
520
P
-
-
700
-
950
-
Diode Forward Voltage
N
-
VSD
P
-
-
1.2
-
-1.2
Dynamic Characteristics
Input Capacitance
N
-
79
-
Ciss
P
-
113
-
Output Capacitance
N
-
13
-
Coss
P
-
15
-
Reverse Transfer Capacitance
N
-
9
-
Crss
P
-
9
-
Switching Characteristics ³
Turn-On Delay Time ²
N
-
6.7
-
Td(on)
P
-
9
-
Rise Time
N
-
4.8
-
Tr
P
-
5.8
-
Turn-Off Delay Time
N
-
17.3
-
Td(off)
P
-
32.7
-
Fall Time
N
-
7.4
-
Tf
P
-
20.3
-
Notes:
1. Surface mounted on a FR-4 board with a recommended minimum pad.
2. Pulse Test: pulse width=300µs, duty cycle≦2%.
3. Switching characteristics are independent from the operating junction temperature.
http://www.SeCoSGmbH.com/
03-Jun-2016 Rev. A
Unit
Test Condition
VGS=0, ID=250µA
V
VGS=0, ID= -250µA
VDS=VGS, ID=250µA
V
VDS=VGS, ID= -250µA
VDS=10V, ID=0.8A
S
VDS= -10V, ID= -0.54A
VDS=0V, VGS= ±10V
µA
VDS=0V, VGS= ±10V
VDS=20V, VGS=0
µA
VDS= -20V, VGS=0
VGS=4.5V, ID=0.65A
VGS=2.5V, ID=0.55A
VGS=1.8V, ID=0.45A
mΩ
VGS= -4.5V, ID= -1A
VGS= -2.5V, ID= -0.8A
VGS= -1.8V, ID= -0.5A
VGS=0, IS=0.15A
V
VGS=0, IS= -0.5A
N-Channel
VDS=16V, VGS=0V, f=1MHz
pF
P-Channel
VDS= -16V, VGS=0V, f=1MHz
N-Channel
VDS=10V, ID=0.5A,
VGS=4.5V, RGEN=10Ω
nS
P-Channel
VDS= -10V, ID= -0.2A,
VGS= -4.5V, RGEN=10Ω
Any changes of specification will not be informed individually.
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