SUM3439 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – N & P-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente
SUM3439
N-Ch: 0.75A, 20V, R_DS(ON) 380 mΩ
P-Ch: -0.66A, -20V, R_DS(ON) 520 mΩ
N & P-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
SUM3439 is the highest performance trench
N-ch and P-ch MOSFET providing excellent R_DS(ON)
and gate charge for most synchronous buck converter
applications
SOT-363
A
E
L
FEATURES
Surface mount package
Low R_DS(ON)
Operated at low logic level gate drive
ESD protected gate
MARKING
49K
B
F
C
H
DG
K
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
1.80 2.20
1.80 2.45
1.15 1.35
0.80 1.10
1.10 1.50
0.10 0.35
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.100 REF.
0.525 REF.
0.08 0.25
8°
0.650 TYP.
PACKAGE INFORMATION
Package
MPQ
SOT-363
3K
Leader Size
7 inch
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
Typical Gate-Source Voltage
Continuous Drain Current ¹
Pulsed Drain Current@ tp=10µs
Thermal Resistance from Junction to Ambient ¹
Lead Temperature for Soldering Purposes@ 1/8’’ from case for 10s
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
RθJA
TL
TJ, TSTG
Rating
N-CH
P-CH
20
-20
±12
±12
0.75
-0.66
1.8
-1.2
833
260
150, -55~150
Unit
V
V
A
A
°C/ W
°C
°C
http://www.SeCoSGmbH.com/
03-Jun-2016 Rev. A
Any changes of specification will not be informed individually.
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