SUM2153 Datasheet, PDF (2/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode MOSFET

Elektronische Bauelemente
SUM2153
0.81A , 20V , R_DS(ON) 310 mΩ
N-Channel Enhancement Mode MOSFET
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typ.
Single Operation
Junction-to-Ambient Thermal Resistance ^{1 T≦10S}
Steady State
RθJA
276
328
Junction-to-Ambient Thermal Resistance ^{2 T≦10S}
Steady State
RθJA
375
446
Junction-to-Case Thermal Resistance
Steady State
RθJC
260
Dual Operation
Junction-to-Ambient Thermal Resistance ^{1 T≦10S}
Steady State
RθJA
310
366
Junction-to-Ambient Thermal Resistance ^{2 T≦10S}
Steady State
RθJA
415
498
Junction-to-Case Thermal Resistance
Steady State
RθJC
265
Note:
1. Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper.
2. Surface mounted on FR4 board using minimum pad size, 1oz copper
3. Repetitive rating, pulse width limited by junction temperature, tp=10µs, Duty Cycle=1%
4. Repetitive rating, pulse width limited by junction temperature TJ=150°C.
Rating
Max.
325
395
445
532
300
360
432
486
575
305
Unit
°C / W
°C / W
ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max.
Static
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Gate-Threshold Voltage
Drain-Source On Resistance
Forward Transconductance
Diode Forward On–Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V(BR)DSS
IDSS
IGSS
VGS(TH)
20
-
-
-
-
1
-
-
±5
0.45 0.58 0.85
-
220 310
RDS(ON)
-
260 360
-
320 460
gFS
-
2
-
Body-Drain Diode Ratings
VSD
0.5
0.7
1.5
Dynamic Characteristics
CISS
COSS
CRSS
QG(TOT)
QG(TH)
QGS
QGD
Td(ON)
Tr
Td(OFF)
Tf
-
50
-
-
13
-
-
8
-
-
1.15
-
-
0.06
-
-
0.15
-
-
0.23
-
-
22
-
-
80
-
-
700
-
-
380
-
Unit
Teat Conditions
V VGS=0, ID=250µA
µA VDS=16V, VGS=0
µA VDS=0 , VGS= ±5V
V VDS=VGS, ID=250µA
VGS=4.5V, ID=0.55A
mΩ VGS=2.5V, ID=0.45A
VGS=1.8V, ID=0.35A
S VDS=5V, ID= 0.55A
V IS=350mA, VGS=0
VDS=10V,
pF VGS=0,
f=100KHz
VDS=10V,
nC VGS=4.5V,
ID=0.55A
VDD=10V,
nS ^{I D=0.55A,}
VGS=4.5V,
RG=6Ω.
http://www.SeCoSGmbH.com/
11-Jan-2013 Rev. A
Any changes of specification will not be informed individually.
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