SUM2153 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode MOSFET

Elektronische Bauelemente
SUM2153
0.81A , 20V , R_DS(ON) 310 mΩ
N-Channel Enhancement Mode MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high
cell density trench process to provide low R_DS(on) and to
ensure minimal power loss and heat dissipation.
MECHANICAL DATA
Trench Technology
Supper high density cell design
Excellent ON resistance
Extremely Low Threshold Voltage
SOT-363
A
E
L
B
F
C
H
DG
K
J
APPLICATION
DC-DC converter circuit
Load Switch
MARKING
53
PACKAGE INFORMATION
Package
MPQ
SOT-363
3K
Leader Size
7 inch
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
1.80 2.20
1.80 2.45
1.15 1.35
0.80 1.10
1.10 1.50
0.10 0.35
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.100 REF.
0.525 REF.
0.08 0.25
8°
0.650 TYP.
MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Drain – Source Voltage
Gate – Source Voltage
Continuous Drain Current ¹
TA= 25°C
TA= 70°C
Power Dissipation ¹
TA= 25°C
TA= 70°C
Continuous Drain Current ²
TA= 25°C
TA= 70°C
Power Dissipation ²
Pulsed Drain Current ³
TA= 25°C
TA= 70°C
Lead Temperature
Operating Junction & Storage Temperature Range
VDS
VGS
ID
PD
ID
PD
IDM
TL
TJ, TSTG
Rating
10S
Steady State
20
±6
0.89
0.81
0.71
0.64
0.38
0.31
0.24
0.2
0.76
0.69
0.61
0.55
0.28
0.23
0.17
0.15
1.4
260
150, -55~150
Unit
V
V
A
W
A
W
A
°C
°C
http://www.SeCoSGmbH.com/
11-Jan-2013 Rev. A
Any changes of specification will not be informed individually.
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