SUM1960NE Datasheet, PDF (2/2 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode MOSFET

Elektronische Bauelemente
SUM1960NE
0.32A , 60V , R_DS(ON) 2 Ω
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. _Unit
Teat Conditions
Static
Gate-Threshold Voltage
Gate-Body Leakage Current
VGS(th)
1
IGSS
-
-
-
V VDS=VGS, ID=250uA
-
±10
uA VDS=0, VGS=±20V
Zero Gate Voltage Drain Current
On-State Drain Current ¹
-
-
1
VDS=48V, VGS=0
IDSS
uA
-
-
50
VDS=48V, VGS=0, TJ=55°C
ID(on)
0.3
-
-
A VDS =5V, VGS=10V
Drain-Source On-Resistance ¹
Forward Transconductance ¹
Diode Forward Voltage ¹
-
-
2
RDS(ON)
-
-
3
gfs
-
8
-
VSD
-
1.1
-
Dynamic ²
VGS=10V, ID=0.3A
Ω
VGS=4.5V, ID=0.2A
S VDS=4.5V, ID=0.3A
V IS=0.2A, VGS=0
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
-
0.4
-
VDS=10V,
Qgs
-
0.1
-
nC VGS=5V,
Qgd
-
0.1
-
ID=0.3A
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
-
10
-
VDD=10V,
Tr
-
6
-
nS ^VGEN=10V,
Td(off)
-
20
-
RL=30Ω,
Tf
-
3
-
ID=0.3A
Notes:
1. Pulse test: PW ≦ 300us duty cycle ≦ 2%.
2. Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
4-Dec-2012 Rev. A
Any changes of specification will not be informed individually.
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