SUM1960NE Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode MOSFET

Elektronische Bauelemente
SUM1960NE
0.32A , 60V , R_DS(ON) 2 Ω
N-Channel Enhancement Mode MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high
cell density trench process to provide low R_DS(on) and to
ensure minimal power loss and heat dissipation.
FEATURES
Low R_DS(on) provides higher efficiency and extends
battery life
Low thermal impedance copper leadframe SOT-363
saves board space
Fast switching speed
High performance trench technology
APPLICATION
DC-DC converters and power management in portable
and battery-powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
PACKAGE INFORMATION
Package
MPQ
SOT-363
3K
Leader Size
7 inch
SOT-363
A
E
L
B
F
C
H
DG
K
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
1.80 2.20
1.80 2.45
1.15 1.35
0.80 1.10
1.10 1.50
0.10 0.35
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.100 REF.
0.525 REF.
0.08 0.25
8°
0.650 TYP.
ESD
Protection Diode
2KV
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current ¹
TA=25°C
ID
TA=70°C
Pulsed Drain Current ²
IDM
Continuous Source Current (Diode Conduction) ¹
IS
Power Dissipation ¹
TA=25°C
PD
TA=70°C
Operating Junction and Storage Temperature Range
TJ, TSTG
Thermal Resistance Rating
Maximum Junction to Ambient ¹
t ≦ 5 sec
Steady State
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
R_θJA
Ratings
60
±20
0.32
0.26
0.7
0.25
0.3
0.21
-55~150
415
460
Unit
V
V
A
A
A
W
°C
°C / W
http://www.SeCoSGmbH.com/
4-Dec-2012 Rev. A
Any changes of specification will not be informed individually.
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