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| SSQ5N50 Datasheet, PDF (2/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Ch Enhancement Mode Power MOSFET | |||
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Elektronische Bauelemente
SSQ5N50
4.5A, 500V, RDS(ON) 1500mΩ
N-Ch Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
PARAMETER
SYMBO MIN. TYP. MAX. UNIT TEST CONDITIONS
Static
Gate-Threshold Voltage
VGS(th)
2
-
4
V VDS= VGS, ID = 250 μA
Gate-Body Leakage
IGSS
-
-
±100 nA VDS = 0V, VGS= ±20V
Zero Gate Voltage Drain Current
On-State Drain Current 1
Drain-Source On-Resistance 1
Forward Transconductance 1
-
IDSS
-
ID(on)
5
RDS(ON)
-
gfs
-
-
25
VDS= 500V, VGS= 0V
-
250
μA VDS= 400V,
VGS= 0V, TJ=125°C
-
-
A VDS = 10V, VGS= 10V
-
1500 m⦠VGS= 10V, ID= 2.7 A
2.5
-
S VDS= 50V, ID= 2.7 A
Diode Forward Voltage
VSD
-
1.6
-
Dynamic 2
V IS= 4.5 A, VGS= 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
-
26
-
VDS = 400 V
Qgs
-
4
-
nC VGS = 10 V
Qgd
-
15
-
ID = 3.1 A
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
Tr
Td(off)
Tf
-
12.8
-
-
7.4
-
-
38
-
-
19.6
-
VDD= 250 V
ID= 3.1 A
nS VGEN = 10 V
RRLG=EN7=9
ïï
12
ï
Input Capacitance
CISS
-
623
-
Output Capacitance
COSS
-
112
-
Reverse Transfer Capacitance
CRSS
-
24
-
Notes
1 Pulse testï¼Pulse width ⦠300 μs, duty cycle ⦠2ï¼
.
2 Guaranteed by design, not subject to production testing.
VDS = 25 V
pF VGS = 0 V
f = 1MHz
http://www.SeCoSGmbH.com/
02-Dec-2010 Rev.A
Any changes of specification will not be informed individually.
Page 2 of 4
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