SSQ5N50 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente
SSQ5N50
4.5A, 500V, R_DS(ON) 1500mΩ
N-Ch Enhancement Mode Power MOSFET
FEATURES
 Low R_DS(on) Technology.
 Low thermal impedance.
 Fast switching speed.
APPLICATIONS
 Electronic ballast.
 Electronic transformer
 Switch mode power supply.
RoHS Compliant Product
A suffix of “-C” specifies halogen free

Gate

Drain

Source
TO-220P
D
C
B
E
A
R
T
S
G
F
I
H
J
K
L
U
X
M
P
N
O
V
Q
Q
W
123
Dimensions in millimeters
REF.
A
B
C
D
E
F
G
H
J
K
L
M
Millimeter
Min. Max.
7.90 8.10
9.45 9.65
9.87 10.47
-
11.50
1.06 1.46
2.60 3.00
6.30 6.70
8.35 8.75
1.60 Typ.
1.10 1.30
1.17 1.37
-
1.50
REF.
N
O
P
Q
R
S
T
U
V
W
X
Millimeter
Min. Max.
0.75 0.95
0.66 0.86
13.50 14.50
2.44 3.44
3.50 3.70
1.15 1.45
4.30 4.70
-
2.7
1.89 3.09
0.40 0.60
2.60 3.60
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
Drain-Source Voltage
V_DS
500
Gate-Source Voltage
V_GS
±20
Continuous Drain Current ¹
I_D @T_C=25℃
4.5
Pulsed Drain Current ²
I_DM
18
Continuous Source Current (Diode Conduction) ¹
I_S
4.5
Total Power Dissipation ¹
P_D @T_C=25℃
74
Operating Junction and Storage Temperature Range T_J, T_STG
-55 ~ 175
THERMAL RESISTANCE RATINGS
Maximum Thermal Resistance Junction-Ambient ¹
R_θJA
62.5
Maximum Thermal Resistance Junction-Case
R_θJC
1.7
Notes：
1 Package Limited.
2 Pulse width limited by maximum junction temperature.
UNIT
V
V
A
A
A
W
°C
°C / W
°C / W
http://www.SeCoSGmbH.com/
02-Dec-2010 Rev.A
Any changes of specification will not be informed individually.
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