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| SSP7461P_15 Datasheet, PDF (2/2 Pages) SeCoS Halbleitertechnologie GmbH – P-Channel Enhancement MOSFET | |||
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Elektronische Bauelemente
SSP7461P
-10 A, -60 V, RDS(ON) 45 mï
P-Channel Enhancement MOSFET
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Teat Conditions
Static
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current 1
Drain-Source On-Resistance 1
Forward Transconductance 1
Diode Forward Voltage
VGS(th)
IGSS
IDSS
ID(ON)
RDS(ON)
gFS
VSD
-1
-
-
-
-
-
-
-
-50
-
-
-
-
-
-
31
-
-0.7
Dynamic 2
-
±100
-1
-5
-
45
60
-
-
V VDS = VGS, ID = -250μA
nA VDS = 0V, VGS= ±25V
μA VDS = -48V, VGS= 0V
VDS = -48V, VGS= 0V, TJ=55°C
A VDS = -5V, VGS= -10V
m⦠VGS= -10V, ID = -9A
VGS= -4.5V, ID = -7.2A
S VDS= -15V,,ID = -9A
V IS= 2.1A, VGS= 0V
Total Gate Charge
Qg
-
15.3
-
Gate-Source Charge
Qgs
-
5.2
-
Gate-Drain Charge
Qgd
-
5.8
-
Turn-On Delay Time
Td(ON)
-
15
-
Rise Time
Tr
-
12
-
Turn-Off Delay Time
Td(OFF)
-
62
-
Fall Time
Tf
-
46
-
Notes
1. Pulse testï¼PW ⦠300 us duty cycle ⦠2%.
2. Guaranteed by design, not subject to production testing.
ID= -9A
nC VDS= -15V
VGS= -4.5V
ID= -1A, VDD= -15V
nS
VGEN= -10V
RL= 15â¦
RG= 6â¦
http://www.SeCoSGmbH.com/
18-Sep-2013 Rev. B
Any changes of specification will not be informed individually.
Page 2 of 2
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