SSP7461P_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – P-Channel Enhancement MOSFET

Elektronische Bauelemente
SSP7461P
-10 A, -60 V, R_DS(ON) 45 m
P-Channel Enhancement MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize
a high cell density trench process to provide low R_DS(on)
and to ensure minimal power loss and heat dissipation.
SOP-8PP
FEATURES
 Low R_DS(on) provides higher efficiency and extends
battery life.
 Low thermal impedance copper leadframe SOP-8PP
saves board space.
 Fast switching speed.
 High performance trench technology.
APPLICATION
DC-DC converters and power management in
portable and battery-powered products such as
computers, printers, PCMCIA cards, cellular and
cordless telephones.
PACKAGE INFORMATION
Package
MPQ
SOP-8PP
3K
Leader Size
13 inch
S
S
S
G
REF.
Millimeter
Min. Max.
REF.
Millimeter
Min. Max.
A 0.85 1.00 θ 0° 10°
B
5.3 BSC.
b
5.2 BCS
C 0.15 0.25 c 0.30 0.50
D
D
E
3.8 BCS.
6.05 BCS.
d
e
1.27BSC
5.55 BCS.
D
F 0.03 0.30
G
4.35 BCS.
f
g
0.10 0.40
1.2 BCS.
L 0.40 0.70
D
D
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current ¹
T_A=25°C
T_A=70°C
I_D
Pulsed Drain Current ²
I_DM
Continuous Source Current (Diode Conduction) ¹
I_S
Power Dissipation ¹
T_A=25°C
T_A=70°C
P_D
Operating Junction and Storage Temperature Range
T_J, T_STG
Thermal Resistance Rating
Maximum Junction to Ambient ¹
t≦10 sec
Steady-State
Notes
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
R_θJA
Rating
-60
±20
-10
-8
±50
-2.1
5.0
3.2
-55 ~ 150
25
65
Unit
V
V
A
A
A
W
°C
°C / W
http://www.SeCoSGmbH.com/
18-Sep-2013 Rev. B
Any changes of specification will not be informed individually.
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