SSM1K2N20 Datasheet, PDF (2/4 Pages) SeCoS Halbleitertechnologie GmbH – -Channel Enhancement Mode Power MOSFET

Elektronische Bauelemente
SSM1K2 20
1A, 200V, R_{DS(O )} 1.2Ω
-Channel Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified)
Parameter
Symbol Min.
Typ.
Max.
Drain-Source Breakdown Voltage
BVDSS
200
-
-
Gate Threshold Voltage
VGS(th)
1
-
3
Forward Transfer conductance
gfs
-
2.8
-
Gate-Source Leakage Current
IGSS
-
Drain-Source Leakage Current
IDSS
-
-
Static Drain-Source On-Resistance ³ RDS(ON)
-
-
±100
-
1
-
1.2
-
1.7
Total Gate Charge
Gate-Source Charge
Gate-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current ¹
Pulsed Source Current ²
Forward On Voltage ³
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
IS
ISM
VSD
-
8.5
-
-
1.1
-
-
2.1
-
-
4
-
-
6
-
-
16
-
-
6.5
-
-
225
-
-
50
-
-
15
-
Source-Drain Diode
-
-
1
-
-
4
-
-
1.2
Reverse Recovery Time
trr
-
90
-
Reverse Recovery Charge
Qrr
-
280
-
Notes:
1. Surface mounted on a 1 inch² FR-4 board with 2OZ copper.
2. The power dissipation is limited by 150°C junction temperature.
3. Pulse test : Pulse width ≦ 300us, Duty cycle ≦ 2%.
Unit
Test Condition
V VGS=0, ID=250uA
V VDS=VGS, ID=250uA
S VDS=10V, ID=1A
nA VGS=±20V
uA VDS=160V, VGS=0
Ω VGS=10V, ID=1A
Ω VGS=4.5V, ID=0.5A
ID=1A
nC VDS=160V
VGS=10V
VDD=100V
Ns ^ID=1A
VGS=10V
RG=3.3Ω
VGS=0
pF VDS=25V
f=1MHz
A
V I_S=1A, V_GS=0V
nS _{IF=1A , dI/dt=100A/µs ,}
nC TJ=25°C
http://www.SeCoSGmbH.com/
22-Dec-2016 Rev. A
Any changes of specification will not be informed individually.
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