SSM1K2N20 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – -Channel Enhancement Mode Power MOSFET

Elektronische Bauelemente
SSM1K2 20
1A, 200V, R_{DS(O )} 1.2Ω
-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SSM1K2N20 is the highest performance
trench dual N-ch MOSFETs with extreme high cell density,
which provide excellent R_DS(ON) and gate charge for most
of the synchronous buck converter applications .
The SSM1K2N20 meet the RoHS and Green Product
requirement with full function reliability approved.
FEATURES
Advanced High Cell Density Trench Technology
Super Low Gate Charge
Green Device Available
PACKAGE INFORMATION
Package
MPQ
SOT-223
2.5K
Leader Size
13 inch
SOT-223
A
M
4
Top View _{C B}
K
L
E
1
2
3
D
F
GH
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
6.20 6.40
6.83 7.07
3.30 3.70
1.50 1.70
4.50 4.70
0.66 0.82
REF.
G
H
J
K
L
M
Millimeter
Min. Max.
0.00 0.10
2.00 REF.
0.25 0.35
-
2.30 REF.
2.90 3.10
D
24
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current @VGS=10V ¹
Pulsed Drain Current ²
Total Power Dissipation ¹
VGS
TA=25°C
ID
TA=70°C
IDM
TA=25°C
PD
Operating Junction and Storage Temperature Range
TJ, TSTG
Thermal Resistance Rating
t≦10sec
Maximum Thermal Resistance from Junction to Ambient ¹
Steady State RθJA
Maximum Thermal Resistance from Junction to Ambient
1
G
3
S
Rating
200
±20
1
0.8
4
2.5
-55~150
50
83
125
Unit
V
V
A
A
A
W
°C
°C / W
http://www.SeCoSGmbH.com/
22-Dec-2016 Rev. A
Any changes of specification will not be informed individually.
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