SSG9973 Datasheet, PDF (2/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Power Mos.FET

Elektronische Bauelemente
SSG9973
3.9A, 60V,RDS(ON) 80m
N-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25 ^oC Unless otherwise specified)
Parameter
Symbol
Drain-Source Breakdown Voltage
BVDSS
Breakdown Voltage Temp. Coefficient
BVDS/ Tj
Gate Threshold Voltage
VGS(th)
Gate-Source Leakage Current
IGSS
Drain-Source Leakage Current (Tj=25^oC)
IDSS
Drain-Source Leakage Current (Tj=70^oC)
Static Drain-Source On-Resistance²
RDS(ON)
Total Gate Charge ²
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time²
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Forward Transconductance
Qg
Qgs
Qgd
Td(ON)
Tr
Td(Off)
Tf
Ciss
Coss
Crss
Gfs
Min.
60
_
1.0
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
Typ.
_
0.06
_
_
_
_
_
_
8
2
4
8
4
20
6
700
80
50
3.5
Max.
_
_
3.0
±100
1
25
80
100
13
_
_
_
_
_
_
1120
_
_
_
Unit
V
V/ ^oC
V
nA
uA
uA
m
Test Condition
VGS=0V, ID=250uA
Reference to 25^oC, ID=1mA
VDS=VGS, ID=250uA
VGS=±20V
VDS=60V,VGS=0
VDS=48V,VGS=0
VGS=10V, ID=3.9A
VGS=4.5V, ID=2A
ID=3.9A
nC
VDS=48V
VGS=4.5V
VDD=30V
ID=1A
nS
VGS=10V
RG=3.3
RD=30
VGS=0V
pF
VDS=25V
f=1.0MHz
S
VDS=10V, ID=3.9A
Source-Drain Diode
Parameter
Forward On Voltage ²
Reverse Recovery Time
Reverse Recovery Charge
Symbol
VDS
Trr
Qrr
Min.
_
_
_
Typ.
_
28
35
Max.
1.2
_
_
Unit Test Condition
V
IS =3.9A , VGS=0V.
nS _{IS =3.9A , VGS=0V.}
dl/dt=100A/us
nC
Notes: 1.Pulse width limited by safe operating area.
2.Pulse width 300us, dutycycle 2%.
3.Surface mounted on 1 inch² copper pad of FR4 board; 125^OC/W when mounted on min. copper pad.
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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