SSG9973 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Power Mos.FET

Elektronische Bauelemente
SSG9973
3.9A, 60V,RDS(ON) 80m
N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
Description
The SSG9973 provide the designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
Features
* Simple drive requirement
* Low gate charge
D1 D1 D2 D2
8 765
Date Code
9973SS
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³, VGS@10V
Continuous Drain Current³, VGS@10V
Pulsed Drain Current ^1.2
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
123 4
S1 G1 S2 G2
Symbol
VDS
VGS
ID@TA=25к
ID@TA=70к
IDM
PD@TA=25к
Tj, Tstg
SOP-8
0.40
0.90
6.20
5.80
0.25
0.19
0.25
o
45 _{0.375 REF}
3.80
4.00
0.35
1.27Typ.
0.49
4.80
0.100.25
5.00
1.35
o
0
1.75
o
8
Dimensions in millimeters
D1
D2
G1
G2
S1
S2
Ratings
60
±20
3.9
2.5
20
2.0
0.016
-55~+150
Unit
V
V
A
A
A
W
W /eC
eC
Thermal Data
Parameter
3
Thermal Resistance Junction-ambient Max.
Symbol
Rthj-a
Ratings
62.5
Unit
eC /W
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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